Vacuum pump pressure not reach setpoint within time
Vacuum pump pressure not reach setpoint within time Tool encounter vac pump pressure not reach setpoint within time. Checked all testwafers inline all have oxide. Measured oxide is ~10K. Good results come from the one sputerred at Tool 2 with 3.2um (ER=.89) and the one from prod ER tw BOX2 (ER=.88). The other 2 wafers, was oe on edges. Currently still have 1 wafer good ER tw left (Tool 2,3.2um). To use later for scheduled ER check. Or choose from prod BOX2. Withdraw 1 box of fresh bare Si test wafer, now ongoing grow 10K oxide in RG2/sputter in Tool 2 and Tool 7 with 3.2um . Also, took 5pcs of standard BHF Etch rate test wafer (10k) and sent to Tool 7 to sputter 3.2/3.3um to retry ER check later. Afternoon took Etch rate from Tool 2 test wafer ,done er 0.86. checked 1st lot. Continue run prod wafer. 1 lot fresh test wafer, grow 10K oxide in FR02 in previous shift. Already send to sputter 10 wafer in 2, another 5 wafers in TOOL 7 with 3.2 alsi recipe. Remaining unsputter test wafer to be kept besides SP07. BHF ER test wafer done 2 wafer sputter in Tool 1 and 3 wafer sputter Tool 2. All wafer kept besides sp07. And request operator to do er on fresh test wafer sputter from Tool 2 AND Tool 7 each. ER chk using 2 wafers - from Tool 1/Tool 2. Pre Tool 2: ave 3.26, PST: 0.54, er:0.98. For 3sec51, pre: 3.24 pst: 0.237 er: 1.0, seen with oe at the edge. Now inform operator to use TW frm Tool 2 ER chk for TOOL 7/Tool 2 done. TOOL 7 seen with same uneven edges hence unable to measure post thk. Tool 2 er:0.92. no ue detected for production lots. Informed operator to do 1 lot er tw for Tool 2 but not able to find any dummy/tw. Sent 1 lot of TW to strip metal and to dep at Tool 2. MAS prod rcp #03 changed agitation from 10s to 15sec however no lots to run. 1st run to inspect for any oe . Check 1st run W332 timing ok,no oe/ue.
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