Vacuum pump pressure not reach setpoint within time
Tool encounter vac pump pressure not reach setpoint within time. Checked all testwafers inline all have oxide. Measured oxide is ~10K.
Good results come from the one sputerred at Tool 2 with 3.2um (ER=.89) and the one from prod ER tw BOX2 (ER=.88). The other 2 wafers, was oe on edges.
Currently still have 1 wafer good ER tw left (Tool 2,3.2um). To use later for scheduled ER check. Or choose from prod BOX2.
Withdraw 1 box of fresh bare Si test wafer, now ongoing grow 10K oxide in RG2/sputter in Tool 2 and Tool 7 with 3.2um .
Also, took 5pcs of standard BHF Etch rate test wafer (10k) and sent to Tool 7 to sputter 3.2/3.3um to retry ER check later.
Afternoon took Etch rate from Tool 2 test wafer ,done er 0.86. checked 1st lot. Continue run prod wafer.
1 lot fresh test wafer, grow 10K oxide in FR02 in previous shift. Already send to sputter 10 wafer in 2, another 5 wafers in TOOL 7 with 3.2 alsi recipe. Remaining unsputter test wafer to be kept besides SP07.
BHF ER test wafer done 2 wafer sputter in Tool 1 and 3 wafer sputter Tool 2. All wafer kept besides sp07. And request operator to do er on fresh test wafer sputter from Tool 2 AND Tool 7 each.
ER chk using 2 wafers - from Tool 1/Tool 2. Pre Tool 2: ave 3.26, PST: 0.54, er:0.98. For 3sec51, pre: 3.24 pst: 0.237 er: 1.0, seen with oe at the edge. Now inform operator to use TW frm Tool 2
ER chk for TOOL 7/Tool 2 done. TOOL 7 seen with same uneven edges hence unable to measure post thk. Tool 2 er:0.92. no ue detected for production lots. Informed operator to do 1 lot er tw for Tool 2 but not able to find any dummy/tw.
Sent 1 lot of TW to strip metal and to dep at Tool 2. MAS prod rcp #03 changed agitation from 10s to 15sec however no lots to run. 1st run to inspect for any oe . Check 1st run W332 timing ok,no oe/ue.
